Demand for telecom base stations, converters, and charging stations is creating demand for components and devices powered by third-generation semiconductors GaN and SiC.
According to TrendForce, the GaN power market will undergo the highest magnitude of growth with revenues for 2021 to reach $83 million, an impressive 73 percent YoY increase. Going forward, annual GaN power devices revenue is expected to grow at a 78 percent CAGR and reach $850 million in 2025.
Consumer electronics, NEVs, and telecom/data centres, comprise the three largest sources of GaN power devices consumption, at 60 percent, 20 percent, and 15 percent, respectively.
TrendForce finds that about ten smartphone OEMs have released more than 18 models of smartphones equipped with fast charging capability, while notebook manufacturers are also indicating a willingness to adopt fast charging for notebook computers.
Annual SiC revenue, on the other hand, is expected to grow at a 38 percent CAGR and reach $3.39 billion in 2025, with NEVs, solar power generation/storage, and charging stations representing the top three largest source of SiC power device consumption, at 61 percent, 13 percent, and 9 percent, respectively. For the NEV industry, in particular, SiC power devices are most widely used in powertrain inverters, OBCs (on board chargers), and DC-DC converters.
IDMs from Europe, the US, and Japan control substrate supply
Due to their relative difficulty in epitaxial growth and the fact that the industry is moving from 6-inch towards 8-inch substrates as the mainstream, third-generation semiconductor GaN and SiC substrates are 5-20 times more expensive to manufacture compared to traditional 8-inch and 12-inch Si substrates.
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