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IDMs, III-V players gearing up for GaN-on-SiC RF, PA components
Julian Ho, Taipei; Willis Ke, DIGITIMES Wednesday 14 October 2020
International IDMs are keenly developing GaN-on-SiC RF and PA components to tap immense opportunities from communication applications, and Taiwan's III-V players including foundry Win Semiconductors, Visual Photonics Expitaxy (VPEC) and Transom are also actively building a presence in the segment, according to industry sources.
The sources said GaN-on-SiC RF and PA components will be widely adopted for 5G infrastructure, future satellite communications and even 6G applications, promising lucrative opportunities for IDMs and III-V semiconductor players.
Japan-based Sumimoto is now the world's largest vendor of GaN-on-SiC RF components with a 50% share of global supply, and its SiC-substrates are mainly sourced from US-based IIVI, with Taiwan's Win Semi contracted to handle part of related foundry business, the sources noted.
American IDMs Qorvo and Cree are also among major vendors of GaN-on-SiC RF components, with the latter also selling SiC substrates.
NXP's 6-inch GaN wafer fab in Arizona, the US will hit full capacity utilization by the end of 2020, mainly targeting the market for wireless 5G RF and PA communication components, with 5G equipment specialist Ericsson among its clients, the sources said, adding that Taiwan's III-V semiconductor firms are also in the supply chains for Ericsson, Nokia and other telecom equipment makers in the US and Europe.
Julian Ho, Taipei; Willis Ke, DIGITIMES Wednesday 14 October 2020
International IDMs are keenly developing GaN-on-SiC RF and PA components to tap immense opportunities from communication applications, and Taiwan's III-V players including foundry Win Semiconductors, Visual Photonics Expitaxy (VPEC) and Transom are also actively building a presence in the segment, according to industry sources.
The sources said GaN-on-SiC RF and PA components will be widely adopted for 5G infrastructure, future satellite communications and even 6G applications, promising lucrative opportunities for IDMs and III-V semiconductor players.
Japan-based Sumimoto is now the world's largest vendor of GaN-on-SiC RF components with a 50% share of global supply, and its SiC-substrates are mainly sourced from US-based IIVI, with Taiwan's Win Semi contracted to handle part of related foundry business, the sources noted.
American IDMs Qorvo and Cree are also among major vendors of GaN-on-SiC RF components, with the latter also selling SiC substrates.
NXP's 6-inch GaN wafer fab in Arizona, the US will hit full capacity utilization by the end of 2020, mainly targeting the market for wireless 5G RF and PA communication components, with 5G equipment specialist Ericsson among its clients, the sources said, adding that Taiwan's III-V semiconductor firms are also in the supply chains for Ericsson, Nokia and other telecom equipment makers in the US and Europe.
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